Authors: Radulović, Katarina
Nikolić, Pantelija
Vasiljević-Radović, Dana
Todorović, Dragan
Vujatović, Stevan
Bojičić, A.
Blagojević, Vladimir
Urošević, Dragan 
Affiliations: Mathematical Institute of the Serbian Academy of Sciences and Arts 
Title: A contribution of carrier transport processes to the photoacoustic effects in doped narrow gap semiconductors
Journal: Review of Scientific Instruments
Volume: 74
Issue: 1 II
First page: 595
Last page: 597
Issue Date: 1-Jan-2003
Rank: M21a
ISSN: 0034-6748
DOI: 10.1063/1.1515891
Abstract: 
A contribution of carrier transport processes to the photoacoustic (PA) effects in doped narrow gap semiconductors was investigated. Values of thermal diffusivity and minority free carrier diffusion coefficient and their mobility for single crystal p-type IV-VI compounds doped with boron were obtained. The results showed that the frequency transmission PA technique was a simple method for the study of transport processes in semiconductors in the low frequency range.
Publisher: American Institute of Physics

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