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dc.contributor.authorRadulović, Katarinaen
dc.contributor.authorNikolić, Pantelijaen
dc.contributor.authorVasiljević-Radović, Danaen
dc.contributor.authorTodorović, Draganen
dc.contributor.authorVujatović, Stevanen
dc.contributor.authorBojičić, A.en
dc.contributor.authorBlagojević, Vladimiren
dc.contributor.authorUrošević, Draganen
dc.date.accessioned2020-05-01T20:13:58Z-
dc.date.available2020-05-01T20:13:58Z-
dc.date.issued2003-01-01en
dc.identifier.issn0034-6748en
dc.identifier.urihttp://researchrepository.mi.sanu.ac.rs/handle/123456789/1816-
dc.description.abstractA contribution of carrier transport processes to the photoacoustic (PA) effects in doped narrow gap semiconductors was investigated. Values of thermal diffusivity and minority free carrier diffusion coefficient and their mobility for single crystal p-type IV-VI compounds doped with boron were obtained. The results showed that the frequency transmission PA technique was a simple method for the study of transport processes in semiconductors in the low frequency range.en
dc.publisherAmerican Institute of Physics-
dc.relation.ispartofReview of Scientific Instrumentsen
dc.titleA contribution of carrier transport processes to the photoacoustic effects in doped narrow gap semiconductorsen
dc.typeConference Paperen
dc.identifier.doi10.1063/1.1515891en
dc.identifier.scopus2-s2.0-0037283846en
dc.contributor.affiliationMathematical Institute of the Serbian Academy of Sciences and Arts-
dc.relation.firstpage595en
dc.relation.lastpage597en
dc.relation.issue1 IIen
dc.relation.volume74en
dc.description.rankM21a-
item.openairetypeConference Paper-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
crisitem.author.orcid0000-0003-3607-6704-
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