|Affiliations:||Mathematical Institute of the Serbian Academy of Sciences and Arts||Title:||Transport properties of carriers in GaAs obtained using the photoacoustic method with the transmission detection configuration||Journal:||Journal of Physics Condensed Matter||Volume:||8||Issue:||30||First page:||5673||Last page:||5683||Issue Date:||22-Jul-1996||Rank:||M21||ISSN:||0953-8984||DOI:||10.1088/0953-8984/8/30/016||Abstract:||
Electron transport properties of single-crystal GaAs were determined using the photoacoustic method with the transmission detection configuration. The excess-carrier lifetime, the front and the rear recombination velocity, and the coefficients of the carrier diffusion and the thermal diffusivity were determined by comparing experimental results and theoretical photoacoustic signals.
|Publisher:||Institute of Physics Publishing|
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