|Affiliations:||Mathematical Institute of the Serbian Academy of Sciences and Arts||Title:||A contribution of carrier transport processes to the photoacoustic effects in doped narrow gap semiconductors||Journal:||Review of Scientific Instruments||Volume:||74||Issue:||1 II||First page:||595||Last page:||597||Issue Date:||1-Jan-2003||Rank:||M21a||ISSN:||0034-6748||DOI:||10.1063/1.1515891||Abstract:||
A contribution of carrier transport processes to the photoacoustic (PA) effects in doped narrow gap semiconductors was investigated. Values of thermal diffusivity and minority free carrier diffusion coefficient and their mobility for single crystal p-type IV-VI compounds doped with boron were obtained. The results showed that the frequency transmission PA technique was a simple method for the study of transport processes in semiconductors in the low frequency range.
|Publisher:||American Institute of Physics|
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